Low temperature studies of the excited-state structure of negatively charged nitrogen-vacancy color centers in diamond.

نویسندگان

  • A Batalov
  • V Jacques
  • F Kaiser
  • P Siyushev
  • P Neumann
  • L J Rogers
  • R L McMurtrie
  • N B Manson
  • F Jelezko
  • J Wrachtrup
چکیده

We report a study of the 3E excited-state structure of single negatively charged nitrogen-vacancy (NV) defects in diamond, combining resonant excitation at cryogenic temperatures and optically detected magnetic resonance. A theoretical model is developed and shows excellent agreement with experimental observations. In addition, we show that the two orbital branches associated with the 3E excited state are averaged when operating at room temperature. This study leads to an improved physical understanding of the NV defect electronic structure, which is invaluable for the development of diamond-based quantum information processing.

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عنوان ژورنال:
  • Physical review letters

دوره 102 19  شماره 

صفحات  -

تاریخ انتشار 2009